GATE,electronics and communications multiple choice questions ------------------------------------------ Reference: Millman & Halkias
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1. Doping of a semi conductor increases_______ A) Resistivity B) Conductivity C) Inductance D) None 2. Majority carriers in n-type semiconductor are A) Electrons B) Holes C) both D) none 3. Minority carriers in n-type semiconductor are A) Electrons B) Holes C) both D) none 4. Majority carriers in P-type semiconductor are A) Electrons B) Holes C) Both D) None 5. Minority carriers in P-type semiconductor are A) Electrons B) Holes C) Both D) none 6. In which material free electron concentration is approximately equal to density of donor atoms A) N-type B) P-Type C) Both D) none 7. In intrinsic semi conductor, Fermi level(Ef) lies in the _____ of energy gap A) top B) bottom C) middle D) corner 8. Increasing the temperature of either P-type and N-type material moves the Fermi level towards the_____of the forbidden energy gap A) Top B) Bottom C) Corner D) Centre 9. ______is mostly used as a recombination agent by semiconductor manufacturers A) Silver B) Gold C) Iron D) Zinc 10. ______is used to determine whether a metal or semi conductor is of P-type or N-type A) Lenz's law B) Faraday's law C) Hall effect D) Bohr's law
2. Majority carriers in n-type semiconductor are
3. Minority carriers in n-type semiconductor are
4. Majority carriers in P-type semiconductor are
5. Minority carriers in P-type semiconductor are
6. In which material free electron concentration is approximately equal to density of donor atoms
7. In intrinsic semi conductor, Fermi level(Ef) lies in the _____ of energy gap
8. Increasing the temperature of either P-type and N-type material moves the Fermi level towards the_____of the forbidden energy gap
9. ______is mostly used as a recombination agent by semiconductor manufacturers
10. ______is used to determine whether a metal or semi conductor is of P-type or N-type
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